Semiconductor device manufacturing: process – Making passive device – Stacked capacitor
Patent
1996-09-06
1999-08-03
Bowers, Charles
Semiconductor device manufacturing: process
Making passive device
Stacked capacitor
438397, 438253, 438255, H01L 2120
Patent
active
059337427
ABSTRACT:
A method of manufacturing multi-crown shape capacitors for use in semiconductor memories. The present invention uses the high etching selectivity between TEOS-oxide and polysilicon to fabricate the capacitor. using HSG-Si as an etching mask to etch the second dielectric layer to form dielectric pillars. An etching process is performed using the dielectric pillars as a mask to etching a portion of the first conductive layer and to etch away the remaining HSG-Si. Then side wall spacer are formed on the side walls of the dielectric pillars. Next, a selective etching process is used to define a multi-crown shape structure. Utilizing the pillars as a mold, the present invention can be used to form the multi-crown shaped structure to increase the surface area of the capacitor.
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Bowers Charles
Powerchip Semiconductor Corp.
Thompson Craig
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