Multi-component mixtures for manufacturing of in situ doped boro

Details Multi-component mixtures for manufacturing of in situ doped boro Multi-component mixtures for manufacturing of in situ doped boro

1997-05-15

2000-02-29

Brunsman, David

Compositions: coating or plastic

Coating or plastic compositions

Silicon containing other than solely as silicon dioxide or...

C09D18302

Patent

active

060304456

ABSTRACT:
This invention concerns a stable composition useful in the manufacture of semiconductors, comprising a liquid mixture of: tetraethylorthosilicate ("TEOS"), triethylborate ("TEB"), and a triethylphosphorus compound such as triethylphosphate ("TEPO"). The composition may be advantageously used in a plasma enhanced chemical vapor deposition apparatus equipped with a liquid mass flow controller. The boron and phosphorus percentages in the resulting borophosphosilicate film may be varied to arrive at desired percentages. This invention also includes a method useful for the preparation of a high purity liquid mixture useful in the manufacture of semiconductors, comprising the steps of: obtaining high purity (a) tetraethylorthosilicate, (b) triethylborate, and (c) a triethylphosphorus compound; adding components (a), (b), and (c) to a sealed, stainless steel container; and mixing the components to form the liquid mixture.

REFERENCES:
patent: 3392036 (1968-07-01), McLead
patent: 3837873 (1974-09-01), Pollack et al.
patent: 4708884 (1987-11-01), Chandross et al.
Levy et al., "Low Pressure Chemical Vapor Deposition of Borophosphosilicate Glass Films Produced by Injection of Miscible DADBS-TMB-TMP Liquid Sources," J. Electrochem. 134(7):1744-1749, (Jul. 1987).

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