Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2005-04-12
2005-04-12
Quach, T. N. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S706000, C257S777000, C257S778000
Reexamination Certificate
active
06879031
ABSTRACT:
A multi-chips package at least comprises a substrate, an upper chip, a lower chip, a reinforced device, and a plurality of electrically conductive bumps. The upper chip is flip-chip bonded to the upper surface of the substrate and the lower chip is accommodated in the opening and flip-chip bonded to the upper chip. Furthermore, the reinforced device is mounted onto the back surface of the lower chip and the lower surface of the substrate. The coefficient of the thermal expansion of the reinforced device ranges from the coefficient of the thermal expansion of the substrate to the coefficient of the thermal expansion of the chip. In such a manner, the reinforced device can constrain the thermal deformation of the substrate so as to prevent the electrically conductive bumps connecting the first chip and the substrate from being damaged.
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Advanced Semiconductor Engineering Inc.
Quach T. N.
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