Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2008-11-05
2010-06-29
Doan, Theresa T (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S724000, C257S786000, C438S109000, C438S110000
Reexamination Certificate
active
07745921
ABSTRACT:
A semiconductor device includes semiconductor chips differing in withstand voltage or in noise immunity, such as a multi-chip module. The semiconductor device includes first and second semiconductor chips mounted over a package substrate which has bonding pads arranged along the edges. The first semiconductor chip includes bonding pads for analog signals, and the second semiconductor chip includes bonding pads for high-voltage signals. The edges along which the bonding pads for analog signals are arranged and the edges along which the bonding pads for high-voltage signals are arranged are disposed along mutually different edges of the package substrate. Adjoining of electrodes or wirings for high voltage signals and those for analog signals over the package substrate can be easily avoided, and SI deterioration can be thereby restrained.
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Abe Yoshiyuki
Hiranuma Kazuhiko
Kuroda Hiroshi
Antonelli, Terry Stout & Kraus, LLP.
Doan Theresa T
Renesas Electronics Corp.
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