Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2007-03-27
2007-03-27
Clark, S. V. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S688000, C257S706000, C257S723000, C257S727000
Reexamination Certificate
active
10926071
ABSTRACT:
A multi-chip press-connected type semiconductor device comprises: a plurality of active element chips to control an electric current flowing in one direction; a plurality of diode chips that transmit the current in a direction opposite to the current transmitting direction of said active element chip; and electrode plates for said active element chip and for said diode chip, said electrode plates pressing from above and under with said plurality of active element chips and said plurality of diode chips being interposed therebetween; wherein said diode chips are disposed in all of outermost peripheral chip positions with no-existence of other chips adjacent to at least one side of a chip in a chip disposing region, and are disposed in internal layout positions surrounded with the outermost peripheral chip positions, and said diode chips to be disposed in the internal layout positions are arranged in order of a total number of other chips from the smallest that exist adjacently to at least one of a side and a vertex of a chip.
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Hasegawa Shigeru
Kitazawa Hideaki
Clark S. V.
Kabushiki Kaisha Toshiba
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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