Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2007-01-09
2007-01-09
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S778000, C257S723000, C257S686000, C257S782000, C257S783000, C438S108000, C438S109000, C438S118000
Reexamination Certificate
active
10196299
ABSTRACT:
A multi-chip package includes a substrate having first bonding pads and second bonding pads, a first chip having chip pads on an active surface, spacers attached to the substrate between the first bonding pads and the second bonding pads and having a greater thickness than that of the first chip, a second chip having chip pads on an active surface, first bonding wires, second bonding wires, external connection terminals positioned on the bottom surface of the substrate, and a package body. The first chip and the second chip are any pad types. The first and second chips may have chip pads on four edges of the active surfaces or on two opposite edges of the active surfaces. The first bonding wires and the second bonding wires are bonded to the corresponding chip pads and the corresponding first and second bonding pads by the reverse bonding method. The spacer is made of one elected from the group consisting of metal, elastomer, epoxy, and photo sensitive resist. The spacer may be discontinuously formed about a perimeter of the first chip. The multi-chip package of the present invention may further comprise a third chip mounted on the second chip.
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Hyun Han Seob
Shim Jong Bo
Harness & Dickey & Pierce P.L.C.
Smith Zandra V.
Tran Thanh Y.
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