Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-11-08
2005-11-08
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S707000
Reexamination Certificate
active
06963129
ABSTRACT:
A system and method are provided for forming a multi-chip package. The multi-chip package includes a multi-layer substrate and a heat spreader of single, unibody construction. At least two integrated circuits are coupled between the multi-layer substrate and the heat spreader. The integrated circuits are spaced from one another to allow airflow between those circuits and a portion of the underside surface of the heat spreader. Depending on the layout of the package, a passive device can also be placed in the space between integrated circuits. The passive device extends upward a spaced distance from the underneath surface of the heat spreader so as not to block the airflow therebetween. The multi-chip package can accommodate integrated circuits that are either all packaged, all unpackaged, or a combination of each. If packaged and unpackaged integrated circuits are placed on the multi-layer substrate, the heat spreader can extend in two separate planes to accommodate the different thicknesses of those packaged and unpackaged integrated circuits. Alternatively, a second heat spreader can be placed on a relatively thin integrated circuit so that the upper surface of the second heat spreader is coplanar with an upper surface of a relatively thick integrated circuit. This will allow a planar heat spreader to be arranged across the thick integrated circuit and the second heat spreader. In all instances, however, the heat spreader extends as a single, contiguous unibody element across the entire multi-chip package.
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Evans Thomas
Fulcher Edwin M.
Mihelcic Stan
Miller Leah M.
Nagarajan Kumar
Cao Phat X.
Daffer McDaniel LLP
LSI Logic Corporation
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