Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Reexamination Certificate
2008-05-06
2008-05-06
Cao, Phat X (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
C257S777000, C257SE23085, C438S109000
Reexamination Certificate
active
11103479
ABSTRACT:
A multi-chip package and method for manufacturing are disclosed. The multi-chip package may include a substrate, a lower semiconductor chip mounted on the substrate, a first electrical connection for electrically connecting the substrate and the lower semiconductor chip, an upper semiconductor chip attached to the lower semiconductor chip and having overhang portions, and at least one bump interposed between the substrate and the overhang portions. The at least one bump may support the overhang portions and may be formed when the first electrical connection is formed.
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Korean Patent Office Action dated Jan. 13, 2006.
An Sang-Ho
Chung Tae-Gyeong
Kang In-Ku
Cao Phat X
Samsung Electronics Co,. Ltd
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