Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2006-11-07
2006-11-07
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S344000, C257S401000, C257S408000, C257SE29278, C257SE29299
Reexamination Certificate
active
07132690
ABSTRACT:
A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.
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patent: 6888182 (2005-05-01), Mitani et al.
patent: 6919933 (2005-07-01), Zhang et al.
patent: 2005/0139835 (2005-06-01), Lee
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Satoshi Inoue, et al., Analysis of Threshold Voltage Shift Caused by Bias Stress in Low Temperature Poly-Si TFTs, IEDM 97, Jul. 1997, pp. 527-530.
Lee Seok-Woo
Yu Jae-Sung
Diaz José R.
Morgan & Lewis & Bockius, LLP
Parker Kenneth
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