Multi-channel type thin film transistor and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...

Reexamination Certificate

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C257S059000, C257S344000, C257S401000, C257S408000, C257SE29278, C257SE29299

Reexamination Certificate

active

07132690

ABSTRACT:
A multi-channel type thin film transistor includes a gate electrode over a substrate extending along a first direction, a plurality of active layers parallel to and spaced apart from each other extending along a second direction crossing the first direction, and source and drain electrodes spaced apart from each other with respect to the gate electrode and extending along the first direction, wherein each of the plurality of active layers includes a channel region overlapped with the gate electrode, a source region, a drain region, and lightly doped drain (LDD) regions, one between the channel region and the source region and another one between the channel region and the drain region, wherein the LDD regions of the adjacent active layers have different lengths from each other.

REFERENCES:
patent: 5021850 (1991-06-01), Tanaka et al.
patent: 6888182 (2005-05-01), Mitani et al.
patent: 6919933 (2005-07-01), Zhang et al.
patent: 2005/0139835 (2005-06-01), Lee
patent: 10-270699 (1998-10-01), None
patent: 2003-0087919 (2003-11-01), None
Satoshi Inoue, et al., Analysis of Threshold Voltage Shift Caused by Bias Stress in Low Temperature Poly-Si TFTs, IEDM 97, Jul. 1997, pp. 527-530.

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