Multi-cascode transistors

Miscellaneous active electrical nonlinear devices – circuits – and – Gating – Utilizing three or more electrode solid-state device

Reexamination Certificate

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Details

C327S436000, C327S581000

Reexamination Certificate

active

06888396

ABSTRACT:
A cascode circuit with improved withstand voltage is provided. The cascode circuit includes three or more transistors, such as MOSFET transistors. Each transistor has a control terminal, such as a gate, and two conduction terminals, such as a drain and a source. The conduction terminals are coupled in series between two output terminals, such as where the drain of each transistor is coupled to the source of another transistor. A signal input is provided to the gate for the first transistor. Two or more control voltage sources, such as DC bias voltages, are provided to the gate of the remaining transistors. The DC bias voltages are selected so as to maintain the voltage across each transistor to a level below a breakdown voltage level.

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Search Report for PCT/US03/07158 Dated Jul. 7, 2003 in co-pending PCT filing of U.S. application filed herewith.
U. Tietz, CH. Schenk: “Halbleiterschaltungstechnik 8. Auflage” 1986, Springer Verlag Berlin, Berlin Heidelberg New York, XP002245314, p. 476-p. 478, Figure 16.6.

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