Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2003-11-20
2009-02-03
Hendricks, Keith D. (Department: 1794)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C216S041000, C438S095000, C438S098000, C438S102000, C438S689000, C257S004000, C257S005000
Reexamination Certificate
active
07485891
ABSTRACT:
A multi-bit phase change memory cell including a stack of a plurality of conductive layers and a plurality of phase change material layers, each of the phase change material layers disposed between a corresponding pair of conductive layers and having electrical resistances that are different from one another.
REFERENCES:
patent: 5536947 (1996-07-01), Klersy et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6864503 (2005-03-01), Lung
patent: 6893912 (2005-05-01), Lung
patent: 6927410 (2005-08-01), Chen
patent: 6943365 (2005-09-01), Lowrey et al.
patent: 2003/0145257 (2003-07-01), Fields et al.
patent: 2003/0212724 (2003-11-01), Ovshinsky et al.
patent: 2004/0178401 (2004-09-01), Ovshinsky et al.
patent: 2005/0112896 (2005-05-01), Hamann et al.
Jpn. J. Appl. Phys. vol. 39 (2000) 745-751;Part 1, No. 28, Feb. 28, 2000 Investigation of Crystallization Behavior of Sputter-Deposited Nitrogen-Doped Amorphous Ge2Sb2Te5 Thin Films Hun Seo et al.
Hamann Hendrik F.
Lam Chung Hon
Steen Michelle Leigh
Wong Hon-Sum Philip
George Patricia
Hendricks Keith D.
International Business Machines - Corporation
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