Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2007-04-17
2009-11-10
Nguyen, Viet Q (Department: 2827)
Static information storage and retrieval
Floating gate
Multiple values
C365S185200, C365S185240, C365S185330
Reexamination Certificate
active
07616483
ABSTRACT:
A multi-bit-per-cell flash memory device supports a command such that each invocation of the command by the device's host changes respective values of one or more types of reference voltage (e.g., all read reference voltages and/or all program verify reference voltages) of the device to respective new values.
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Nguyen Viet Q
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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