Multi-bit MRAM device with switching nucleation sites

Details Multi-bit MRAM device with switching nucleation sites Multi-bit MRAM device with switching nucleation sites

2006-07-18

2006-07-18

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S048000

Reexamination Certificate

active

07078244

ABSTRACT:
A magnetic memory cell includes a first magneto-resistive device and a second magneto-resistive device. The first magneto-resistive device has a first sense layer. The second magneto-resistive device is connected in series with the first magneto-resistive device. The second magneto-resistive device has a second sense layer. At least one controlled nucleation site is placed on at least one of the first sense layer and the second sense layer.

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J.M. Slaughter, et al, Magnetic Tunnel Junction Materials for Electronic Applications, JOM, JOM-3, 52 (6) 2000, http://www.tms.org/pubs/journals/JOM/0006/Slaughter/Slaughter-0006.html. Jun. 2000.
Caroline A. Ross, et al., Making Nanoscale Magnetic Elements for Magnetic Random Access Memories, NSF Partnership in Nanotechnology Conference, Jan. 29&30, 2001.

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