Multi-bit memory cell structure and method of manufacturing...

Details Multi-bit memory cell structure and method of manufacturing... Multi-bit memory cell structure and method of manufacturing...

2011-07-05

2011-07-05

Smith, Bradley K (Department: 2894)

Semiconductor device manufacturing: process

Having selenium or tellurium elemental semiconductor component

Direct application of electrical current

C438S102000, C257S004000

Reexamination Certificate

active

07972896

ABSTRACT:
A method of manufacturing a semiconductor memory cell including phase change material. A multi-bit memory cell may implement phase change material. Various kinds of information can be stored in one memory cell. A chip size may be minimized without sacrificing capacity and/or memory performance, as compared with a one-bit memory cell.

REFERENCES:
patent: 7642622 (2010-01-01), Yi et al.
patent: 2005/0130414 (2005-06-01), Choi et al.
patent: 2006/0118913 (2006-06-01), Yi et al.
patent: 2007/0155093 (2007-07-01), Jeong et al.
patent: 1808736 (2006-07-01), None
patent: 10-2005-0059400 (2005-06-01), None

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