Multi-bit magnetic memory cells

Details Multi-bit magnetic memory cells Multi-bit magnetic memory cells

2005-06-28

2005-06-28

Wille, Douglas A. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S158000, C365S173000

Reexamination Certificate

active

06911710

ABSTRACT:
A magnetic memory cell includes first and second magneto-resistive devices connected in series. The first and second magneto-resistive devices have sense layers with different coercivities. Magnetic Random Access Memory (MRAM) devices may include arrays of these memory cells.

REFERENCES:
patent: 5930164 (1999-07-01), Zhu
patent: 2002/0036331 (2002-03-01), Bhattacharyya
patent: 0971423 (2000-01-01), None
patent: 1132919 (2001-09-01), None

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