Multi-beam semiconductor laser element

Details Multi-beam semiconductor laser element Multi-beam semiconductor laser element

2005-09-27

2005-09-27

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular beam control device

Producing plural wavelength output

C372S043010, C372S068000, C372S097000

Reexamination Certificate

active

06950451

ABSTRACT:
A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A,42B,42C and42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A,50B,50C and50D) respectively. Two n-type electrodes (52A and52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

REFERENCES:
patent: 6031858 (2000-02-01), Hatakoshi
patent: 0 852 416 (1998-07-01), None
patent: 1005068 (1999-08-01), None
patent: 1 104 031 (2001-05-01), None
patent: 03-214684 (1991-09-01), None
patent: 11-233893 (1999-08-01), None
patent: 2000-196197 (2000-07-01), None
patent: 2000-277863 (2000-10-01), None
patent: 2001-7743 (2001-02-01), None
patent: 2001-217503 (2001-08-01), None
patent: 2001-257429 (2001-09-01), None
patent: 2002-16321 (2002-01-01), None
patent: 2002-76522 (2002-03-01), None
Tsuyoshi Tojo, et al.,“GaN-based High Power Blue-violet Laser Diodes”, Proceedings of International Workshop on Nitride Semiconductors, IPAP Conference Series 1 (2000), pp. 878-882.

Affiliated with

Also associated with

Rating

Multi-beam semiconductor laser element does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-beam semiconductor laser element, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-beam semiconductor laser element will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3381442