Multi-beam semiconductor laser device

Details Multi-beam semiconductor laser device Multi-beam semiconductor laser device

2006-12-12

2006-12-12

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S050121, C372S050122

Reexamination Certificate

active

07149235

ABSTRACT:
A multi-beam semiconductor laser device capable of emitting respective laser beams with uniform optical output levels and enabling easy alignment is provided. This multi-beam semiconductor laser device (40) is a GaN base multi-beam semiconductor laser device provided with four laser stripes (42A,42B,42C and42D) which are capable of emitting laser beams with the same wavelength. The respective laser oscillating regions (42A to42D) are provided with a p-type common electrode (48) on a mesa structure (46) which is formed on a sapphire substrate (44), and have active regions (50A,50B,50C and50D) respectively. Two n-type electrodes (52A and52B) are provided on an n-type GaN contact layer (54) and located as common electrodes opposite to the p-type common electrode (48) on both sides of the mesa structure (46). The distance A between the laser stripe (42A) and the laser stripe (42D) is no larger than 100 μm. The distance B1between the laser stripe (42A) and the n-type electrode (52B) is no larger than 150 μm while the distance B2between the laser stripe (42D) and the n-type electrode (52A) is no larger than 150 μm.

REFERENCES:
patent: 6031858 (2000-02-01), Hatakoshi
patent: 6185238 (2001-02-01), Onomura et al.
patent: 6365429 (2002-04-01), Kneissl et al.
patent: 6950451 (2005-09-01), Tojo et al.
patent: 2002/0063310 (2002-05-01), Kondo et al.
patent: 0 852 416 (1998-07-01), None
patent: 1005068 (1999-08-01), None
patent: 1 104 031 (2001-05-01), None
patent: 03-214684 (1991-09-01), None
patent: 11-233893 (1999-08-01), None
patent: 2000-196197 (2000-07-01), None
patent: 2000-277863 (2000-10-01), None
patent: 2001-7443 (2001-01-01), None
patent: 2001-7743 (2001-02-01), None
patent: 2001-217503 (2001-08-01), None
patent: 2001-257429 (2001-09-01), None
patent: 2002-16321 (2002-01-01), None
patent: 2002-76522 (2002-03-01), None
Tsuyoshi Tojo, et al.,“GaN-based High Power Blue-violet Laser Diodes”, Proceedings of International Workshop on Nitride Semiconductors, IPAP Conference Series 1 (2000), pp. 878-882.

Affiliated with

Also associated with

Rating

Multi-beam semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-beam semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-beam semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3708181