Multi-beam semiconductor laser and method for producing the same

Details Multi-beam semiconductor laser and method for producing the same Multi-beam semiconductor laser and method for producing the same

1993-02-19

1994-10-25

Lee, John D.

Coherent light generators

Particular active media

Semiconductor

H01S 319

Patent

active

053596196

ABSTRACT:
This is disclosed a multi-beam semiconductor laser comprising: an active layer; a first and second cladding layer sandwiching the active layer,the second cladding layer being made of a first material; a contact layer provided on the second cladding layer; a current block layer provided in the second cladding layer, the current block layer being made of a second material and being spaced from the active layer with a predetermined distance; a dividing part provided above the current block for physically dividing the contact layer into two areas; and electrodes respectively provided on the divided areas of the contact layer.

REFERENCES:
patent: 5084894 (1992-01-01), Yamamoto
Patent Abstracts of Japan, vol. 11, No. 99 (E-493) 27 Mar. 1987 & JP-61 248 584 (NEC) 5 Nov. 1986 *abstract*.
Patent Abstracts of Japan, vol. 13, No. 2 (E-700) 6 Jan. 1989 & JP-A-63 215 088 (Matsushita Electric) 7 Sep. 1988 *abstract*.
Patent Abstracts of Japan, vol. 16, No. 23 (E-1157) 21 Jan. 1992 & JP-A-03 240 286 (Fuji Electric) 25 Oct. 1991 *abstract*.
Kapon et al, "Longitudinal-Mode Control in Integrated Semiconductor Laser Phased Arrays by Phase Velocity Matching", Applied Physics Letters, vol. 44, No. 2, Jan. 1984, New York, US, pp. 157-159.
Fujii et al, "High-Power Operation of a Transverse-Mode Stabilised AlGaInP Visible Light Semiconductor Laser", Electronics Letters, vol. 23, No. 18, 27 Aug. 1987, Stevenage, GB pp. 938-939.
Patent Abstracts of Japan, vol. 8, No. 66 (E-234) 28 Mar. 1984 & JP-A-58 215 087 (Toukiyou Kogyo Daigaku) 14 Dec. 1983 * abstract *.
Patent Abstracts of Japan, vol. 15, No. 229 (E-1076) 11 Jun. 1991 & JP-A-03 066 181 (Matsubishi Electric) 20 Mar. 1991 * abstract *.

Affiliated with

Also associated with

Rating

Multi-beam semiconductor laser and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Multi-beam semiconductor laser and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Multi-beam semiconductor laser and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-141277