Multi-band power amplifier

Details Multi-band power amplifier Multi-band power amplifier

2005-01-04

2005-01-04

Nguyen, Khanh Van (Department: 2817)

Amplifiers

With semiconductor amplifying device

Including plural amplifier channels

C330S12400D

Reexamination Certificate

active

06838941

ABSTRACT:
A final-stage power amplification transistor is formed of unit transistors arranged in a mixed manner in a region in which the final output amplification transistors for a multi-band power amplifier is formed. Furthermore, an inductance element is connected between output signal lines to which the final output stage transistors are coupled. Thus, the final-stage transistors in a dual band power amplifier can be made free from current concentration due to heat generation without impairing inter-band isolation.

REFERENCES:
patent: 6151509 (2000-11-01), Chorey
patent: 6201445 (2001-03-01), Morimoto et al.
patent: 6232840 (2001-05-01), Teeter et al.
patent: 6545542 (2003-04-01), Matsuyoshi et al.
patent: 1 035 657 (2000-09-01), None
patent: 61-51754 (1986-04-01), None
patent: P2001-68556 (2001-03-01), None
patent: P2001-102460 (2001-04-01), None

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