Multi-band, inductor re-use low noise amplifier

Amplifiers – With plural amplifier channels – Amplifying different frequencies in different channels

Reexamination Certificate

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C330S306000

Reexamination Certificate

active

07622989

ABSTRACT:
Described herein are multi-band LNAs that reuse inductors for different frequency bands to minimize chip area. In an embodiment, a multi-band LNA is capable of operating in a narrowband (NB) and a wideband (WB) while reusing at least one input impedance matching inductor and at least one load inductor for both bands. The reuse of inductors results in a more efficient use of chip area. In an exemplary embodiment, the LNA comprises a common source transistor and a common gate transistor. In this embodiment, the LNA operates in a common source configuration using the common source transistor to amplify input signals in the NB, and operates in a common gate configuration using the common gate transistor to amplify input signals in the WB. The LNA reuses an input impedance matching inductor and a load inductor in both configurations, and thus both bands.

REFERENCES:
patent: 7023272 (2006-04-01), Hung et al.
patent: 7057457 (2006-06-01), Irvine et al.
patent: 7167044 (2007-01-01), Li et al.
patent: 2008/0211586 (2008-09-01), Galan
Tzeng et al.,A Multiband Inductor-Reuse CMOS Low-Noise Amplifier, IEEE Transactions on Circuits and Systems, II: Express Briefs, vol. 55, No. 3, pp. 209-213 (Mar. 2008).
Hashemi et al.,Concurrent Multiband Low-Noise Amplifiers-Theory, Design, and Applications, IEEE Transactions on Microwave Therapy and Technique, vol. 50, No. 1, pp. 288-301 (Jan. 2002).
Li et al.,A Dual-Band CMOS Front-End with Two Gain Modes for Wireless LAN Applications, IEEE Journal on Solid-State Circuits, vol. 39, No. 11, pp. 2069-2073 (Nov. 2004).
Ranjit Gharpurey,A Broadband Low-Noise Front-End Amplifier for Ultra Wideband in 0.13 μm CMOS, IEEE Journal on Solid-State Circuits, vol. 40, No. 9, pp. 1983-1986 (Sep. 2005).
Lee et al.,A SiGe Low Noise Amplifier for 2.4/5.2/5.7 GHz WLAN Applications, 2003 IEEE International Solid-State Circuits Conference, Session 20, Wireless Local Area Networking, Paper 20.8, 8 pages.
Lu et al.,A Compact 2.4/5.2 GHz CMOS Dual-Band Low-Noise Amplifier, IEEE Microwave and Wireless Components Letters, vol. 15, No. 10, pp. 685-687 (Oct. 2005).
Adiseno et al.,A 1.8-V Wide-Band CMOS LNA for Multiband Multistandard Front-End Receiver, IEEE, pp. 141-144 (Apr. 3, 2003).
Hyvonen et al.,An ESD-Protected, 2.45/5.25 GHz Dual-Band CMOS LNA with Series LC Loads and a 0.5-V Supply, IEEE Radio Frequency Integrated Circuits Symposium, pp. 43-46 (Feb. 5, 2005).

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