Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1993-09-02
1995-12-05
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
257194, H01L 29812, H01L 29778
Patent
active
054731755
ABSTRACT:
A high electron mobility field effect semiconductor device includes a layer stack including electron supply layers and electron transport layers to form a plurality of hetero-junctions so as to provide 2DEG layers in hetero-interfaces on the electron transport layer side, a source electrode and a drain electrode disposed with an interval on a surface of the layer stack to oppose each other and to be conductive to the 2DEG layers, and a gate electrode extending between the source and drain electrodes to develop a Schottky contact with the upper-most carrier supply layer. The electron supply layer remote from the gate electrode has an electron density higher than that of the electron supply layer less remote from the gate electrode.
REFERENCES:
patent: 5151757 (1992-09-01), Enoki et al.
patent: 5223724 (1993-06-01), Green, Jr.
patent: 5258632 (1993-11-01), Sawada
patent: 5262660 (1993-11-01), Streit et al.
Ishikawa et al., "Improvement of two-dimensional electron gas concentration in selectively . . . "; Journal of Appl. Phys. 61(5) 1 Mar. 1987,; pp. 1937-1940.
Minimo Yutaka
Nikaido Jun-Ichiro
Fahmy Wael M.
Fijitsu Quantum Devices Limited
Fujitsu Limited
Limanek Robert P.
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