MTJ stack with crystallization inhibiting layer

Details MTJ stack with crystallization inhibiting layer MTJ stack with crystallization inhibiting layer

2005-12-20

2005-12-20

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S096000, C438S653000, C365S158000

Reexamination Certificate

active

06977181

ABSTRACT:
A method of forming a magnetic stack and a structure for a magnetic stack of a resistive memory device. A crystallization inhibiting layer is formed over the free layer of a magnetic stack, improving thermal stability. The crystallization inhibiting layer comprises an amorphous material having a higher crystallization temperature than the crystallization temperature of the free layer material. The crystallization inhibiting layer inhibits the crystallization of the underlying free layer, providing improved thermal stability for the resistive memory device.

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