MTJ read head with sidewall spacers

Details MTJ read head with sidewall spacers MTJ read head with sidewall spacers

2007-07-10

2007-07-10

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S197000, C438S381000, C438S680000, C438S692000, C257SE21170, C257SE21221, C257SE21304, C257SE21293, C257SE21006, C257SE21646

Reexamination Certificate

active

11106320

ABSTRACT:
Following CMP, a magnetic tunnel junction stack may protrude through the oxide that surrounds it, making it susceptible to possible shorting to its sidewalls. The present invention overcomes this problem by depositing silicon nitride spacers on these sidewalls prior to oxide deposition and CMP. So, even though the stack may protrude through the top surface of the oxide after CMP, the spacers serve to prevent possible later shorting to the stack.

REFERENCES:
patent: 6475857 (2002-11-01), Kim et al.
patent: 6555858 (2003-04-01), Jones et al.
patent: 6881351 (2005-04-01), Grynkewich et al.
patent: 6911156 (2005-06-01), Grynkewich et al.
patent: 6916669 (2005-07-01), Jones et al.
patent: 2004/0191928 (2004-09-01), Shi
patent: 2004/0205958 (2004-10-01), Grgnkewich et al.
patent: 2006/0183318 (2006-08-01), Liu et al.
Co-pending U.S. Appl. No. 10/849,311, filed May 19, 2004, Hang et al., “MRAM Cell Structure and Method of Fabrication”.

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