MTJ based magnetic field sensor with ESD shunt trace

Details MTJ based magnetic field sensor with ESD shunt trace MTJ based magnetic field sensor with ESD shunt trace

2008-07-08

2011-11-15

Aurora, Reena (Department: 2858)

Electricity: measuring and testing

Magnetic

Magnetic field detection devices

C324S244000

Reexamination Certificate

active

08058871

ABSTRACT:
Presented herein is a shunted MTJ sensor formed of a plurality of electrically connected MTJ cells for measuring magnetic fields and currents and its method of fabrication. To provide stable single domain magnetic moments of the MTJ cells and to ensure that the magnetic moments return to a fixed bias point in the absence of external magnetic fields, the cells are formed of sufficiently small size and with elliptical cross-section of aspect ratio greater than 1.2. To eliminate the possibility of ESD damage to the cells, they are protected by a parallel shunt, formed as a trace of sufficiently high resistance that directs accumulated charges harmlessly to ground while bypassing the cells.

REFERENCES:
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Co-pending US Patent HMG06-046, U.S. Appl. No. 11/788,912, filed Apr. 23, 2007, “MTJ Sensor Including Domain Stable Free Layer,” assigned to the same assignee as the present invention.

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