Semiconductor device manufacturing: process – Making passive device
Reexamination Certificate
2007-12-04
2007-12-04
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Making passive device
C438S238000, C257SE21304, C257SE21645, C257SE21646, C257SE21657, C257SE21659
Reexamination Certificate
active
11184660
ABSTRACT:
A metal/semiconductor/metal (MSM) binary switch memory device and fabrication process are provided. The device includes a memory resistor bottom electrode, a memory resistor material over the memory resistor bottom electrode, and a memory resistor top electrode over the memory resistor material. An MSM bottom electrode overlies the memory resistor top electrode, a semiconductor layer overlies the MSM bottom electrode, and an MSM top electrode overlies the semiconductor layer. The MSM bottom electrode can be a material such as Pt, Ir, Au, Ag, TiN, or Ti. The MSM top electrode can be a material such as Pt, Ir, Au, TiN, Ti, or Al. The semiconductor layer can be amorphous Si, ZnO2, or InO2.
REFERENCES:
patent: 5496759 (1996-03-01), Yue et al.
patent: 5838608 (1998-11-01), Zhu et al.
patent: 6013950 (2000-01-01), Nasby
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6753561 (2004-06-01), Rinerson et al.
patent: 6914810 (2005-07-01), Hosotani
patent: 7079442 (2006-07-01), Rinerson et al.
Hsu Sheng Teng
Li Tingkai
Law Office of Gerald Maliszewski
Maliszewski Gerald
Nhu David
Sharp Laboratories of America Inc.
LandOfFree
MSM binary switch memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MSM binary switch memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MSM binary switch memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3878364