MRAM sense layer area control

Details MRAM sense layer area control MRAM sense layer area control

2005-02-08

2005-02-08

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C360S324200, C216S022000, C216S040000

Reexamination Certificate

active

06852550

ABSTRACT:
This invention relates to MRAM technology and new MRAM memory element designs. Specifically, this invention relates to the use of ferromagnetic layers of different sizes in an MRAM element. This reduces magnetic coupling between a pinned layer and a sense layer and provides a more effective memory element. In addition, the design of the present invention reduces the instances of electrical shorts occurring between the ferromagnetic layers in an MRAM element

REFERENCES:
patent: 6228276 (2001-05-01), Ju et al.
patent: 6469879 (2002-10-01), Redon et al.

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