Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-05-10
2005-05-10
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S414000, C257S421000, C365S158000
Reexamination Certificate
active
06891193
ABSTRACT:
A magnetic random access memory (MRAM) device is provided which includes a conductive line configured to induce a magnetic field with a higher magnitude along at least a portion of a magnetic cell junction than along a spacing arranged adjacent to the magnetic cell junction. In some embodiments, the conductive line may include first portions aligned with a plurality of magnetic cell junctions and second portions aligned with spacings arranged between the plurality of magnetic cell junctions. In such an embodiment, the first portions preferably include different peripheral profiles than the second portions. A method for fabricating such an MRAM device is also provided herein. The method may include aligning magnetic cell junctions and first portions of a field-inducing line with each other such that at least part of the first portions of the field-inducing line are configured to conduct a higher density of current than second portions of the field-inducing line.
REFERENCES:
patent: 5732016 (1998-03-01), Chen et al.
patent: 5892708 (1999-04-01), Pohm
patent: 5920500 (1999-07-01), Tehrani et al.
patent: 6005800 (1999-12-01), Koch et al.
patent: 6104633 (2000-08-01), Abraham et al.
patent: 6163477 (2000-12-01), Tran
patent: 6236590 (2001-05-01), Bhattacharyya et al.
patent: 6331944 (2001-12-01), Monsma et al.
patent: 6392924 (2002-05-01), Liu et al.
patent: 6424561 (2002-07-01), Li et al.
patent: 6430085 (2002-08-01), Rizzo
patent: 6466471 (2002-10-01), Bhattacharyya
patent: 6576480 (2003-06-01), Chen
patent: 6597049 (2003-07-01), Bhattacharyya et al.
patent: 20020012269 (2002-01-01), Li et al.
patent: 20020097601 (2002-07-01), Hoenigschmid
patent: 20020109172 (2002-08-01), Okazawa
patent: 20020141232 (2002-10-01), Saito et al.
patent: 20020153580 (2002-10-01), Hosotani et al.
patent: 20020171100 (2002-11-01), Phom
patent: 20030104636 (2003-06-01), Bloomquist et al.
patent: 4-023293 (1992-01-01), None
patent: 10-116490 (1998-05-01), None
patent: 2000-195250 (2000-07-01), None
patent: 2002-151660 (2002-05-01), None
Conley & Rose, P.C.
Daffer Kevin L.
Flynn Nathan J.
Leilang Mollie E.
Sefer Ahmed N.
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