MRAM diode array and access method

Static information storage and retrieval – Interconnection arrangements – Magnetic

Reexamination Certificate

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C365S048000, C365S158000, C365S171000, C365S173000, C365S175000, C365S203000

Reexamination Certificate

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07936580

ABSTRACT:
A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a write current through the magnetic tunnel junction data cell. A first diode is electrically between the magnetic tunnel junction data cell and the source line and a second diode is electrically between the magnetic tunnel junction data cell and the source line. The first diode and second diode are in parallel electrical connection, and having opposing forward bias directions.

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