Static information storage and retrieval – Interconnection arrangements – Magnetic
Reexamination Certificate
2011-05-03
2011-05-03
Pham, Ly D (Department: 2827)
Static information storage and retrieval
Interconnection arrangements
Magnetic
C365S048000, C365S158000, C365S171000, C365S173000, C365S175000, C365S203000
Reexamination Certificate
active
07936580
ABSTRACT:
A memory unit includes a magnetic tunnel junction data cell is electrically coupled to a bit line and a source line. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by passing a write current through the magnetic tunnel junction data cell. A first diode is electrically between the magnetic tunnel junction data cell and the source line and a second diode is electrically between the magnetic tunnel junction data cell and the source line. The first diode and second diode are in parallel electrical connection, and having opposing forward bias directions.
REFERENCES:
patent: 3982233 (1976-09-01), Crookshanks
patent: 3982235 (1976-09-01), Bennett
patent: 4160988 (1979-07-01), Russell
patent: 4232057 (1980-11-01), Ray
patent: 4247915 (1981-01-01), Bartlett
patent: 4323589 (1982-04-01), Ray et al.
patent: 4576829 (1986-03-01), Kaganowicz
patent: 4901132 (1990-02-01), Kuwano
patent: 5083190 (1992-01-01), Pfiester
patent: 5135878 (1992-08-01), Bartur
patent: 5278636 (1994-01-01), Williams
patent: 5330935 (1994-07-01), Dobuzinsky
patent: 5365083 (1994-11-01), Tada
patent: 5412246 (1995-05-01), Dobuzinsky
patent: 5443863 (1995-08-01), Neely
patent: 5580804 (1996-12-01), Joh
patent: 5614430 (1997-03-01), Liang
patent: 5739564 (1998-04-01), Kosa
patent: 5872052 (1999-02-01), Iyer
patent: 5913149 (1999-06-01), Thakur
patent: 5923948 (1999-07-01), Cathey, Jr.
patent: 5926412 (1999-07-01), Evans
patent: 5929477 (1999-07-01), McAllister
patent: 6011281 (2000-01-01), Nunokawa
patent: 6013548 (2000-01-01), Burns
patent: 6034389 (2000-03-01), Burns
patent: 6077745 (2000-06-01), Burns
patent: 6100166 (2000-08-01), Sakaguchi
patent: 6114211 (2000-09-01), Fulford
patent: 6121642 (2000-09-01), Newns
patent: 6121654 (2000-09-01), Likharev
patent: 6165834 (2000-12-01), Agarwal
patent: 6300205 (2001-10-01), Fulford
patent: 6341085 (2002-01-01), Yamagami
patent: 6346477 (2002-02-01), Kaloyeros
patent: 6376332 (2002-04-01), Yankagita
patent: 6448840 (2002-09-01), Kao
patent: 6534382 (2003-03-01), Sakaguchi
patent: 6617642 (2003-09-01), Georgescu
patent: 6624463 (2003-09-01), Kim
patent: 6653704 (2003-11-01), Gurney
patent: 6667900 (2003-12-01), Lowrey
patent: 6750540 (2004-06-01), Kim
patent: 6753561 (2004-06-01), Rinerson
patent: 6757842 (2004-06-01), Harari
patent: 6781176 (2004-08-01), Ramesh
patent: 6789689 (2004-09-01), Beale
patent: 6800897 (2004-10-01), Baliga
patent: 6842368 (2005-01-01), Hayakawa
patent: 6917539 (2005-07-01), Rinerson
patent: 6940742 (2005-09-01), Yamamura
patent: 6944052 (2005-09-01), Subramanian
patent: 6979863 (2005-12-01), Ryu
patent: 7009877 (2006-03-01), Huai
patent: 7045840 (2006-05-01), Tamai
patent: 7051941 (2006-05-01), Yui
patent: 7052941 (2006-05-01), Lee
patent: 7098494 (2006-08-01), Pakala
patent: 7130209 (2006-10-01), Reggiori
patent: 7161861 (2007-01-01), Gogl
patent: 7180140 (2007-02-01), Brisbin
patent: 7187577 (2007-03-01), Wang
patent: 7190616 (2007-03-01), Forbes
patent: 7200036 (2007-04-01), Bessho
patent: 7215568 (2007-05-01), Liaw
patent: 7218550 (2007-05-01), Schwabe
patent: 7224601 (2007-05-01), Panchula
patent: 7233537 (2007-06-01), Tanizaki
patent: 7236394 (2007-06-01), Chen
patent: 7247570 (2007-07-01), Thomas
patent: 7272034 (2007-09-01), Chen
patent: 7272035 (2007-09-01), Chen
patent: 7273638 (2007-09-01), Belyansky
patent: 7274067 (2007-09-01), Forbes
patent: 7282755 (2007-10-01), Pakala
patent: 7285812 (2007-10-01), Tang
patent: 7286395 (2007-10-01), Chen
patent: 7289356 (2007-10-01), Diao
patent: 7345912 (2008-03-01), Luo
patent: 7362618 (2008-04-01), Harari
patent: 7378702 (2008-05-01), Lee
patent: 7379327 (2008-05-01), Chen
patent: 7381595 (2008-06-01), Joshi
patent: 7382024 (2008-06-01), Ito
patent: 7397713 (2008-07-01), Harari
patent: 7413480 (2008-08-01), Thomas
patent: 7414908 (2008-08-01), Miyatake
patent: 7416929 (2008-08-01), Mazzola
patent: 7432574 (2008-10-01), Nakamura
patent: 7440317 (2008-10-01), Bhattacharyya
patent: 7465983 (2008-12-01), Eldridge
patent: 7470142 (2008-12-01), Lee
patent: 7470598 (2008-12-01), Lee
patent: 7502249 (2009-03-01), Ding
patent: 7515457 (2009-04-01), Chen
patent: 7542356 (2009-06-01), Lee
patent: 7464629 (2010-01-01), Hamberg
patent: 7732881 (2010-06-01), Krumm
patent: 7738279 (2010-06-01), Siesazeck
patent: 2002/0081822 (2002-06-01), Yanageta
patent: 2002/0136047 (2002-09-01), Scheuerlein
patent: 2003/0045064 (2003-03-01), Kunikiyo et al.
patent: 2003/0168684 (2003-09-01), Pan
patent: 2004/0084725 (2004-05-01), Nishiwaki
patent: 2004/0114413 (2004-06-01), Parkinson
patent: 2004/0114438 (2004-06-01), Morimoto
patent: 2004/0257878 (2004-12-01), Morikawa
patent: 2004/0262635 (2004-12-01), Lee
patent: 2005/0044703 (2005-03-01), Liu
patent: 2005/0092526 (2005-05-01), Fielder
patent: 2005/0122768 (2005-06-01), Fukumoto
patent: 2005/0145947 (2005-07-01), Russ
patent: 2005/0218521 (2005-10-01), Lee
patent: 2005/0253143 (2005-11-01), Takaura
patent: 2005/0280042 (2005-12-01), Lee
patent: 2005/0280061 (2005-12-01), Lee
patent: 2005/0280154 (2005-12-01), Lee
patent: 2005/0280155 (2005-12-01), Lee
patent: 2005/0280156 (2005-12-01), Lee
patent: 2005/0282356 (2005-12-01), Lee
patent: 2006/0073652 (2006-04-01), Pellizzer
patent: 2006/0131554 (2006-06-01), Joung
patent: 2006/0275962 (2006-12-01), Lee
patent: 2007/0007536 (2007-01-01), Hidaka
patent: 2007/0077694 (2007-04-01), Lee
patent: 2007/0105241 (2007-05-01), Leuschner
patent: 2007/0113884 (2007-05-01), Kensey
patent: 2007/0115749 (2007-05-01), Gilbert
patent: 2007/0253245 (2007-11-01), Ranjan
patent: 2007/0279968 (2007-12-01), Luo
patent: 2007/0281439 (2007-12-01), Bedell
patent: 2007/0297223 (2007-12-01), Chen
patent: 2008/0007993 (2008-01-01), Saitoh
patent: 2008/0029782 (2008-02-01), Carpenter
patent: 2008/0032463 (2008-02-01), Lee
patent: 2008/0037314 (2008-02-01), Ueda
patent: 2008/0038902 (2008-02-01), Lee
patent: 2008/0048327 (2008-02-01), Lee
patent: 2008/0094873 (2008-04-01), Lai
patent: 2008/0108212 (2008-05-01), Moss
patent: 2008/0144355 (2008-06-01), Boeve
patent: 2008/0170432 (2008-07-01), Asao
patent: 2008/0191312 (2008-08-01), Oh
patent: 2008/0261380 (2008-10-01), Lee
patent: 2008/0265360 (2008-10-01), Lee
patent: 2008/0273380 (2008-11-01), Diao
patent: 2008/0310213 (2008-12-01), Chen
patent: 2008/0310219 (2008-12-01), Chen
patent: 2009/0014719 (2009-01-01), Shimizu
patent: 2009/0040855 (2009-02-01), Luo
patent: 2009/0052225 (2009-02-01), Morimoto
patent: 2009/0072246 (2009-03-01), Genrikh
patent: 2009/0072279 (2009-03-01), Moselund
patent: 2009/0161408 (2009-06-01), Tanigami
patent: 2009/0162979 (2009-06-01), Yang
patent: 2009/0185410 (2009-07-01), Huai
patent: 2009/0296449 (2009-12-01), Slesazeck
patent: 2010/0007344 (2010-01-01), Guo
patent: 2010/0067281 (2010-03-01), Xi
patent: 2010/0078620 (2010-05-01), Khoury
patent: 2010/0110756 (2010-05-01), Khoury
patent: 2010/0142256 (2010-06-01), Kumar
patent: 2010/0149856 (2010-06-01), Tang
patent: 102008026432 (2009-12-01), None
patent: 1329895 (2003-07-01), None
patent: WO 0062346 (2000-10-01), None
patent: WO 0215277 (2002-02-01), None
patent: WO 2005/124787 (2005-12-01), None
patent: WO 2006/100657 (2006-09-01), None
patent: WO 2007/100626 (2007-09-01), None
patent: WO 2007/128738 (2007-11-01), None
Chung et al., A New SOI Inverter for Low Power Applications, Proceedings 1996 IEEE International SOI Conference, Oct. 1996.
Hosomi et al., A Novel Nonvolatile Memory with Spin Torque Transfer Magnetization Switching: Spin-RAM, 2005 IEEE.
Adee, S., “Quantum Tunneling Creates Fast Lane for Wireless”, IEEE Spectrum, Oct. 2007.
Berger et al., Merged-Transitor Logic (MTL)-A Low-Cost Bipolar Logic Concept, Solid-State Circuits, IEEE Journal, vol. 7, Issue 5, pp. 340-346 (2003).
Giacomini, R., et al., Modeling Silicon on Insulator MOS Transistors with Nonrectangular-Gate Layouts, Journal of the Electrochemical Society, 2006, pp. G218-G222, vol. 153, No. 3.
Hwang et al., Degradation of MOSFET's Drive Current Due to Halo Ion Implantation, Electron Devices Meeting, 1996, International Date: Dec. 8-11, 1996, pp. 567-570.
Interne
Chen Yiran
Li Hai
Liu Hongyue
Lu Yong
Xue Song S.
Campbell Nelson Whipps LLC
Pham Ly D
Seagate Technology LLC
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