MRAM devices with fine tuned offset

Details MRAM devices with fine tuned offset MRAM devices with fine tuned offset

2007-01-09

2007-01-09

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C365S044000

Reexamination Certificate

active

11050797

ABSTRACT:
A MRAM cell structure is disclosed as containing an additional ferromagnetic layer and coupling layer between the third ferromagnetic layer and the anti-ferromagnetic layer. The additional ferromagnetic layer affects the demagnetization field to which the free layer is exposed, thereby reducing any bias introduced to the free layer. Further, by adjusting the thickness of the additional ferromagnetic layer, the effects of Neel coupling on the free layer are reduced.

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