MRAM cell with split conductive lines

Details MRAM cell with split conductive lines MRAM cell with split conductive lines

2007-09-18

2007-09-18

Tran, Andrew Q. (Department: 2824)

Static information storage and retrieval

Interconnection arrangements

Magnetic

C365S063000, C365S051000, C365S158000, C365S173000, C365S171000, C365S130000, C365S133000

Reexamination Certificate

active

11138643

ABSTRACT:
A magnetoresistive memory cell includes N magnetoresistive elements conductively connected in series (where N is an integer greater than or equal to two). The magnetoresistive elements, respectively, are positioned between at least two adjacent conductive lines. At least one of the conductive lines is a partially split conductive line having at least one slit portion encompassing an interconnect running therethrough and connected to at least one adjacent magnetoresistive element.

REFERENCES:
patent: 6104632 (2000-08-01), Nishimura
patent: 6879516 (2005-04-01), Nejad et al.
patent: 6882553 (2005-04-01), Nejad et al.
patent: 6950333 (2005-09-01), Hiramoto et al.
patent: 7023743 (2006-04-01), Nejad et al.
patent: 7061115 (2006-06-01), Drynan
patent: 7092284 (2006-08-01), Braun et al.
patent: 7212432 (2007-05-01), Ferrant et al.
patent: 2004/0227172 (2004-11-01), Park
patent: 2006/0194442 (2006-08-01), Baltzinger et al.
patent: 1653516 (2006-05-01), None
patent: 1677342 (2006-07-01), None

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