Static information storage and retrieval – Associative memories – Magnetic cell
Reexamination Certificate
2011-05-24
2011-05-24
Hoang, Huan (Department: 2827)
Static information storage and retrieval
Associative memories
Magnetic cell
C365S053000, C365S189090
Reexamination Certificate
active
07948783
ABSTRACT:
An MRAM comprises: a plurality of magnetic memory cells each having a magnetoresistive element; and a magnetic field application section. The magnetic field application section applies an offset adjustment magnetic field in a certain direction to the plurality of magnetic memory cells from outside the plurality of magnetic memory cells. Respective data stored in the plurality of magnetic memory cells become the same when the offset adjustment magnetic field is removed.
REFERENCES:
patent: 7068535 (2006-06-01), Johnson
patent: 1995219853 (1995-08-01), None
patent: 2005086015 (2005-03-01), None
patent: 2006511892 (2006-04-01), None
patent: 2006511936 (2006-04-01), None
patent: 2006134363 (2006-05-01), None
International Search Report for PCT/JP2007/071922 mailed Feb. 12, 2008.
Honda Takeshi
Ishiwata Nobuyuki
Sakimura Noboru
Sugibayashi Tadahiko
Tahara Shuichi
Hoang Huan
Lappas Jason
NEC Corporation
LandOfFree
MRAM does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MRAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MRAM will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2692641