Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – Mesa structure
Reexamination Certificate
2001-06-29
2004-05-04
Lee, Eddie (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
Mesa structure
C257S625000, C257S080000, C257S081000, C257S082000, C257S012000, C438S456000, C216S099000
Reexamination Certificate
active
06730990
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a mountable microstructure used when mounting an element on a base substance (substrate), and is suitable for example for an optical interconnection device between laminated IC chips as with for example a one-chip computer.
2. Description of the Related Art
In order to achieve even higher speed for a computer, a one-chip computer is considered where IC chips, such as a CPU and DRAM, is laminated, and the exchange of data between chips is performed with optical signals. Regarding an optical interconnection device for such a one-chip computer, if for example respective IC chips are laminated so that the light emitting element of a certain IC chip faces a light receiving element of another IC chip, the emission light of one light emitting element can be directly received by the other IC chip. Consequently, if data is carried in the light, then data transmission between IC chips can be performed at high speed. Furthermore, if the IC chip provided with the light receiving element is further laminated, the signal of one light emitting element can be received by a plurality of light receiving elements, that is the data of one IC chip can be transmitted simultaneously to a plurality of other IC chips. Therefore an extremely high speed optical bus can be formed. For the light emitting element of such an optical interconnection device between laminated IC chips, a vertical resonator type surface emitting laser element for which the aperture of the discharge port is small is ideal.
On the other hand, there is an element mounting technique disclosed for example in U.S. Pat. No. 5,904,545. This element mounting technique, as shown in
FIG. 10
involves for example forming concavities A of a predetermined shape on an upper surface of a base substance C of for example a substrate or a film or the like, molding microstructures B of a shape for engaging in these concavities, mixing the microstructures B in a predetermined fluid to make a slurry, and then flowing this slurry along the upper surface of the base substance C so that elements comprising the microstructures B of the same shape as the concavities A are engaged under gravity in the concavities A, to thereby mount these. In this conventional technology also there is disclosure of forming for example a surface emitting laser element comprising GaAs, into a microstructure of a shape for engaging in the concavities, and mounting the surface emitting laser element by means of the aforementioned mounting technique. Here the base substance is formed from Si and the concavities on the upper surface of the base substance are formed by Si anisotropic etching.
Incidentally, as is well known, in Si anisotropic etching, the accuracy of the shape to be formed is extremely high. That is, the shape of the concavities formed on the upper surface of the base substance has an extremely good accuracy. However, with a compound semiconductor represented by the surface emitting laser element, even if anisotropic etching is effected, the accuracy of the shape is not very high. That is, for a microstructure of a compound semiconductor formed by anisotropic etching, the shape accuracy is inferior. Consequently, no matter how high the shape accuracy of the concavities on the surface of the base substance, the shape accuracy of the microstructures of the compound semiconductor is low, and hence the positioning accuracy for mounting as an element is low.
BRIEF SUMMARY OF THE INVENTION
The present invention has been developed in order to solve the above problems, with the object of providing a mountable microstructure for which the element mounting location accuracy is extremely high.
In order to solve the above problems, a mountable microstructure according to a first aspect of the present invention is a mountable microstructure which is engaged and mounted in a concavity formed at a predetermined location on an upper surface of a base substance, by mixing in a fluid to form a slurry and flowing the slurry over the upper surface of the base substance, wherein there is provided an Si block of a shape for engaging in the concavity on the upper surface of the base substance, and a compound semiconductor element formed on an upper surface of the block.
Moreover, a mountable microstructure according to a second aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded by a compound semiconductor-Si direct bonding.
Furthermore, a mountable microstructure according to a third aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded by an InP-Si direct bonding.
Moreover, a mountable microstructure according to a fourth aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded by a GaAs—Si direct bonding.
Furthermore, a mountable microstructure according to a fifth aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded via a metal film.
Moreover, a mountable microstructure according to a sixth aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded via solder.
Furthermore, a mountable microstructure according to a seventh aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded via resin.
Moreover, a mountable microstructure according to an eighth aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded via an SiO
2
film.
Furthermore, a mountable microstructure according to a ninth aspect of the present invention is one where in the first aspect, the Si block and the compound semiconductor element are bonded via an SiO
2
film and an AlGaAs layer.
Moreover, a mountable microstructure according to a tenth aspect of the present invention is one where in any one of the first through ninth aspects, a plurality of the compound semiconductor elements are formed on each Si block.
Furthermore, a mountable microstructure according to an eleventh aspect of the present invention is one where in any one of the first through tenth aspects, individual elements are formed on the Si block itself.
Moreover, a mountable microstructure according to a twelfth aspect of the present invention is one where in the eleventh aspect, the individual elements formed on the Si block itself and the compound semiconductor element are arranged so as to overlap or face each other.
Furthermore, a mountable microstructure according to a thirteenth aspect of the present invention is one where in the eleventh aspect, the individual elements formed on the Si block itself and the compound semiconductor element are arranged so as to be displaced from each other.
Moreover, a mountable microstructure according to a fourteenth aspect of the present invention is one where in any one of the first through thirteenth aspects, all of the electrodes for the compound semiconductor element are formed on the upper surface of the Si block.
Furthermore, a mountable microstructure according to a fifteenth aspect of the present invention is one where in any one of the first through thirteenth aspects, any one of the electrodes for the compound semiconductor element is made common with the electrodes for the Si block.
Moreover, a mountable microstructure according to a sixteenth aspect of the present invention is one where in the fifteenth aspect, a high resistance layer with a resistance greater than 1×10
4
&OHgr; is provided between the compound semiconductor element electrode formed on the upper surface of the Si block and the Si block.
Furthermore, a mountable microstructure according to a seventeenth aspect of the present invention is one where in the sixteenth aspect, the high resistance layer comprises a compound semiconductor.
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Kondo Takayuki
Shimoda Tatsuya
Gebremariam Samuel A
Lee Eddie
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