Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Reexamination Certificate
2008-09-09
2008-09-09
Nguyen, Ngoc-Yen M. (Department: 1793)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
C423S406000, C423S344000, C117S213000, C117S900000, C419S039000, C419S056000
Reexamination Certificate
active
10520834
ABSTRACT:
The present invention relates to silicon nitride mould parts, particularly crucibles for use in connection with directional solidification and pulling of silicon single crystals. The mould parts consist of Si3N4having a total open porosity between 40 and 60% by volume and where more than 50% of the pores in the surface of the mould parts have a size which is larger than the means size of the Si3N4particles. The invention further relates to a method for producing the silicon nitride mould parts.
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English Translation of Office Action dated Nov. 6, 2004 in Norwegian Patent Application No. 20023865.
English Translation of Office Action dated Apr. 28, 2003 in Norwegian Patent Application No. 20023865.
Olsen Espen
Solheim Arve
Sorheim Havard
Crusin AS
Liao Diana J
Lucas & Mercanti LLP
Nguyen Ngoc-Yen M.
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