Mosture barrier for floating gate transistors

Details Mosture barrier for floating gate transistors Mosture barrier for floating gate transistors

1989-01-04

1991-01-01

Wojciechowicz, Edward J.

357 239, 357 2311, 357 52, 357 54, 357 59, H01L 2978

Patent

active

049822500

ABSTRACT:
A floating gate device has a control gate and a floating gate. The floating gate is for charging to set a logic state therein. Moisture is a problem in causing the floating gate to either lose its charge or becoming charged to the wrong state. A thin nitride layer deposited over the control gate and along the sides of the floating gate and control gate as a moisture barrier. This nitride layer is sufficiently thin so as to provide only insignificant attenuation of ultra-violet light used to neutralize the charge state of the floating gate. This nitride layer is not used as a passivation layer so that the desirable phoshosilicate glass (PSG) can be used for passivation.

REFERENCES:
patent: 4581622 (1986-04-01), Takasaki et al.
patent: 4668973 (1987-05-01), Dawson et al.
patent: 4686000 (1987-08-01), Heath

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