MOSFET with temperature protection

Details MOSFET with temperature protection MOSFET with temperature protection

1988-05-02

1990-06-26

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 28, 357 38, 307310, H01L 2974, H01L 2702

Patent

active

049376462

ABSTRACT:
On the semiconductor body of a MOSFET (1), the semiconductor body of a thyristor (5) (or of a bipolar transistor) is located for thermal conduction purposes. The anode and cathode terminals (A, K) (emitter and collector terminal) are connected to the gate terminal (G) and to the source terminal (S) of the MOSFET (1), respectively. The thyristor (bipolar transistor) is rated so that it turns on before a temperature of 150.degree. to 180.degree. is obtained which is critical for the MOSFET. Thus the gate-source capacitance of the MOSFET is effectively shortcircuited and the MOSFET turns off.

REFERENCES:
patent: 3872418 (1975-03-01), Plough et al.
patent: 4050083 (1977-09-01), Jaskolski et al.
patent: 4117505 (1978-09-01), Nakata
patent: 4142115 (1979-02-01), Nakata et al.
patent: 4323793 (1982-04-01), Schutten et al.
H. Wolf, "Semiconductors," .COPYRGT.1971, John Wiley & Sons, Inc., p. 399.

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