MOSFET with perimeter channel

Details MOSFET with perimeter channel MOSFET with perimeter channel

1982-09-07

1985-07-30

Edlow, Martin H.

357 238, 357 2314, H01L 2978

Patent

active

045325340

ABSTRACT:
A vertical MOSFET device includes a major surface having an active, gate-controlled portion adjacent to an inactive portion. A gate-controlled perimeter channel is disposed at the boundary between the active and inactive portions.

REFERENCES:
patent: 4072975 (1978-02-01), Ishitani
patent: 4145700 (1979-03-01), Jambotkar

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