MOSFET with gate-penetrating halo implant

Details MOSFET with gate-penetrating halo implant MOSFET with gate-penetrating halo implant

1994-03-31

1995-03-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 29, 437 41, G01N 3324

Patent

active

053957733

ABSTRACT:
After gates are patterned in a submicron CMOS process, a halo implant is performed with sufficient energy that the halo implant penetrates the gate structures to below the transistor channel regions. Where the substrate is not masked by gate materal, the halo implant penetrates below drain and source regions. During diffusion, this halo limits lateral diffusion of the source/drain dopants. The resulting transistor exhibits enhanced breakdown voltage characteristics during both on and off conditions.

REFERENCES:
patent: 4306916 (1981-12-01), Wallesen
patent: 4968639 (1990-11-01), Bergonzoni
S. Rathnam et al., "An optimized 0.5 micron LDD Transistor", IEDM, 1983, p. 237.

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