MOSFET which reduces the short-channel effect

Details MOSFET which reduces the short-channel effect MOSFET which reduces the short-channel effect

1985-08-08

1987-09-29

James, Andrew J.

357 2311, 357 239, 357 238, 357 2312, H01L 2978

Patent

active

046971980

ABSTRACT:
Disclosed herein is a MOS-type field-effect transistor in which a semiconductor region having the same type of conductivity as the substrate and an impurity concentration higher than that of the substrate is formed under the channel so as to come at both ends thereof into contact with the source and drain regions. The semiconductor region restricts the extension of depletion layer from the source and drain regions, and restricts the short-channel effect. The junction capacity is small between the semiconductor region and the source and drain regions.

REFERENCES:
patent: 3936857 (1976-02-01), Ota
patent: 4143388 (1979-03-01), Esaki et al.
patent: 4212683 (1980-07-01), Jones et al.
patent: 4219829 (1980-08-01), Dorba et al.
patent: 4247860 (1981-01-01), Tihanyi
patent: 4267558 (1981-05-01), Guterman
Abbas et al., "Short Channel Field-Effect Transistor," IBM Technical Disclosure Bulletin, vol. 17, No. 11, Apr. 1975, p. 3263.

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