MOSFET-type semiconductor device, and method of...

Details MOSFET-type semiconductor device, and method of... MOSFET-type semiconductor device, and method of...

2005-08-17

2008-09-02

Hoang, Quoc D (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S302000, C257S328000, C257SE27096, C257SE27155, C257SE21629, C438S268000

Reexamination Certificate

active

07420230

ABSTRACT:
A MOSFET-type semiconductor device includes a monocrystalline semiconductor layer formed in a shape of a thin wall on a insulating film, a gate electrode straddling over the semiconductor layer around the middle portion of the wall-shaped semiconductor layer via a gate insulating film, source and drain regions formed at the both ends of the semiconductor layer, a first metal-semiconductor compound layer formed on one of the side walls of each of source and drain regions of the semiconductor layer, and a second metal-semiconductor compound layer having a different composition and Shottky barrier height from that of the first metal-semiconductor compound layer on the other side wall of each of source and drain regions of the semiconductor layer.

REFERENCES:
patent: 6051509 (2000-04-01), Tsuchiaki
patent: 6271566 (2001-08-01), Tsuchiaki
patent: 6545327 (2003-04-01), Tsuchiaki
patent: 7148541 (2006-12-01), Park et al.
Huang et al., “Sub-50 nm P-Channel FinFET”, IEEE ED, vol. 48, No. 5, pp. 880-886, (2001).

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