Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2008-09-02
2008-09-02
Hoang, Quoc D (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257S302000, C257S328000, C257SE27096, C257SE27155, C257SE21629, C438S268000
Reexamination Certificate
active
11205025
ABSTRACT:
A MOSFET-type semiconductor device includes a monocrystalline semiconductor layer formed in a shape of a thin wall on a insulating film, a gate electrode straddling over the semiconductor layer around the middle portion of the wall-shaped semiconductor layer via a gate insulating film, source and drain regions formed at the both ends of the semiconductor layer, a first metal-semiconductor compound layer formed on one of the side walls of each of source and drain regions of the semiconductor layer, and a second metal-semiconductor compound layer having a different composition and Shottky barrier height from that of the first metal-semiconductor compound layer on the other side wall of each of source and drain regions of the semiconductor layer.
REFERENCES:
patent: 6051509 (2000-04-01), Tsuchiaki
patent: 6271566 (2001-08-01), Tsuchiaki
patent: 6545327 (2003-04-01), Tsuchiaki
patent: 7148541 (2006-12-01), Park et al.
Huang et al., “Sub-50 nm P-Channel FinFET”, IEEE ED, vol. 48, No. 5, pp. 880-886, (2001).
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Hoang Quoc D
Kabushiki Kaisha Toshiba
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