MOSFET transistor and method of fabrication

Details MOSFET transistor and method of fabrication MOSFET transistor and method of fabrication

1974-03-13

1976-10-19

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148190, 29271, 357 23, 357 41, H01L 2122

Patent

active

039869032

ABSTRACT:
An n channel MOSFET transistor which includes doping of previously formed source and drain elements with a heavy diffusion of phosphorous or arsenic creating n.sup.+.sup.+ regions in the source and drain. The extra diffusion step is preferably accomplished just prior to contact metalization.

REFERENCES:
patent: 3476619 (1969-11-01), Tolliver
patent: 3594241 (1971-07-01), Bresee
patent: 3696276 (1972-10-01), Boland
patent: 3699646 (1972-10-01), Vadasz
patent: 3725136 (1973-04-01), Morgan
patent: 3756876 (1973-09-01), Brown et al.
bean et al., "The Influence of Crystal Orientation Etc.", Proc. IEEE, vol. 57, No. 9, Sept. 69, pp. 1469-1476.
Krick et al., "Integrable, Symmetrical, High-Voltage Mosfet Structure," IBM Tech. Disc. Bul., vol. 15, No. 6, Nov. '72, pp. 1884-1885.

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