MOSFET transistor

Details MOSFET transistor MOSFET transistor

1976-05-20

1978-05-30

Miller, Jr., Stanley D.

357 90, H01L 2978

Patent

active

040926613

ABSTRACT:
An n channel MOSFET transistor which includes doping of previously formed source and drain elements with a heavy diffusion of phosphorous or arsenic creating n++ regions in the source and drain. The extra diffusion step is preferably accomplished just prior to contact metalization.

REFERENCES:
patent: 3737347 (1973-06-01), Alcott et al.
patent: 3967981 (1976-07-01), Yamazaki
Platt et al., "FET Fabrication," IBM TDB, vol. 14, No. 1, Jun. 1971, pp. 247-248.
Krick et al., "Integratable, Symmetrical, High-Voltage MOSFET Structure," IBM TDB, vol. 15, No. 6, Nov. 1972, pp. 1884-1885.

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