Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons
Patent
1986-07-16
1988-03-01
Miller, Stanley D.
Electrical transmission or interconnection systems
Nonlinear reactor systems
Parametrons
307542, 307584, 307549, H03K 1704, H03K 17687
Patent
active
047288264
ABSTRACT:
The voltage peaks occuring upon disconnection of inductive loads are normally attenuated by a by-pass diode connected in parallel with the load. The driving countervoltage is thereby limited to the value of the forward voltage drop of the diode. For a power MOSFET with a source-side inductive load, the driving countervoltage is increased by placing a series connection of an additional MOSFET and a Zener diode between the gate of the power MOSFET and the connection of the load which is remote from the power MOSFET. The driving countervoltage at the source now becomes the Zener voltage plus the occuring gate-source voltage of the power MOSFET.
REFERENCES:
patent: 3740581 (1973-06-01), Pfiffner
patent: 3848108 (1974-11-01), Takarada
patent: 3896367 (1975-07-01), Frantz
patent: 4020365 (1977-04-01), Weir
patent: 4313065 (1982-01-01), Yoshida et al.
patent: 4492883 (1985-01-01), Janutka
Instruments and Experimental Techniques, vol. 27, No. 5, Part 1, Sep./Oct. 1984, pp. 1159-1161, Plenum Pub. Corp., NY, USA; V. V. Bachurin et al.: "Heavy-Current Nanosecond Pulse Shapers Using High-Power MOS Transistors with a Vertical Channel".
Nachrichtentechnik GmbH, p. 5, last col.-p. 6, col. 2; FIG. 1.
New Electronics, vol. 18, No. 11, May 28, 1985, pp. 44, 46 London, Alexander et al, "Designing Improved High Speed Gate Drive Circuit".
Einzinger Josef
Fellinger Christine
Leipold Ludwig
Tihanyi Jenoe
Weber Roland
Callahan Timothy P.
Edelman Lawrence C.
Miller Stanley D.
Siemens Aktiengesellschaft
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