MOSFET Substrate sensitivity control

Details MOSFET Substrate sensitivity control MOSFET Substrate sensitivity control

1978-12-29

1981-06-16

Larkins, William D.

357 64, H01L 2978, H01L 29167

Patent

active

042741050

ABSTRACT:
The sensitivity of the threshold voltage in MOSFET devices to changes in substrate voltage may be reduced at a given temperature by the introduction of sufficiently deep energy level, low diffusivity impurities into the depletion region under the gate of the MOSFET.

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patent: 4132998 (1979-01-01), Dingwall
Brotherton et al., Proc. Conf. on Integrated Circuits, East England, May 1967 (IEEE Conf. Pub. #30).
Proc. IEEE, Richman, pp. 774-775, (Apr. 1968).

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