Fishing – trapping – and vermin destroying
Patent
1992-02-04
1993-01-12
Quach, T. N.
Fishing, trapping, and vermin destroying
437 45, 437 50, 437 29, 748DIG126, H01L 21336
Patent
active
051790327
ABSTRACT:
In one embodiment, a vertical MOSFET is formed having a lower gate portion overlying the channel region of the MOSFET and separated from the channel region by a thin gate oxide layer. An upper gate portion is formed overlying the drain of the MOSFET and separated from the drain by a relatively thick oxide layer. In this particular embodiment, since the dielectric thickness between the upper gate portion and the drain is relatively large, the MOSFET exhibits a lower gate-drain capacitance (C.sub.GD) value, while the threshold voltage of the MOSFET remains relatively unchanged. The upper gate portion may be electrically connected to the lower gate portion or may be electrically isolated from the lower gate portion. A preferred method of forming the resulting MOSFET having this lowered C.sub.GD allows the source and body regions to be precisely aligned with the drain edge of the lower gate portion.
REFERENCES:
patent: 4290077 (1981-09-01), Ronen
patent: 4455565 (1984-06-01), Goodman
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4892838 (1990-01-01), Fisher et al.
patent: 4969020 (1990-11-01), Matsushita
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