Mosfet semiconductor device and manufacturing method thereof

Details Mosfet semiconductor device and manufacturing method thereof Mosfet semiconductor device and manufacturing method thereof

1987-06-10

1988-10-25

Beck, Shrive P.

Fishing, trapping, and vermin destroying

437239, 427 99, 4272551, H01L 21265

Patent

active

047804289

ABSTRACT:
A method of forming a gate insulating film on a MOSFET. After a SiO.sub.2 film is formed by thermal oxidation as a gate insulating film on a MOSFET, the SiO.sub.2 film is removed by selective etching from the surface area other than MOSFET region, and an oxygen doped semi-insulating polycrystalline silicon film is deposited thereon. Then, a silicon nitride layer is deposited and a SiO.sub.2 film is formed by CVD method on the surface area other than the MOSFET region.

REFERENCES:
patent: 3971061 (1976-07-01), Matsushita
patent: 3977019 (1976-08-01), Matsushita
patent: 4086613 (1978-04-01), Biet
patent: 4339285 (1982-07-01), Pankove
patent: 4420765 (1983-12-01), Tarng
patent: 4489103 (1984-12-01), Goodman
patent: 4574466 (1986-03-01), Hagner
patent: 4695479 (1987-09-01), Nakakura

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