MOSFET semiconductor device and manufacturing method thereof

Details MOSFET semiconductor device and manufacturing method thereof MOSFET semiconductor device and manufacturing method thereof

1986-03-12

1987-09-22

Smith, John D.

Fishing, trapping, and vermin destroying

29571, 427 93, 427 94, 427 95, 156662, 156653, H01L 21314

Patent

active

046954791

ABSTRACT:
A method of forming a gate insulating film on a MOSFET. After a SiO.sub.2 film is formed by thermal oxidation as a gate insulating film on a MOSFET, the SiO.sub.2 film is removed by selective etching from the surface area other than the MOSFET region, and an oxygen doped semi-insulating polycrystalline silicon film is depostied thereon. Then, a silicon nitride layer is deposited and a SiO.sub.2 film is formed by CVD method on the surface area other than the MOSFET region.

REFERENCES:
patent: 3971061 (1976-07-01), Matsushita
patent: 3977019 (1976-08-01), Matsushita
patent: 4086613 (1978-04-01), Biet
patent: 4339285 (1982-07-01), Pankove
patent: 4420765 (1983-12-01), Tarng
patent: 4489103 (1984-12-01), Goodman
patent: 4574466 (1986-03-01), Hagner
Electronics International, "Doping Polysilicon with Oxygen Neutralizes Device Surface Charges", Electronics, Jun. 26, 1985.
Yamaguchi et al, "Advanced MOS IC Process Technology Using Local Oxidation of O-POS Films", JEE (Japan), Oct. 1977, pp. 18-22.

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