MOSFET latching driver

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

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307235F, 307247R, 307270, H03K 3286, H03K 3353, H03K 520, H03K 1756

Patent

active

040041700

ABSTRACT:
An MOSFET latching driver circuit is disclosed which employs a depletion mode FET load bistable latch whose first node drives a depletion mode FET device and whose second node drives an enhancement mode FET device which are interconnected in a push-pull driver circuit. The latching driver has a reduced size when laid out in an integrated circuit and operates at a high speed.

REFERENCES:
patent: 3697775 (1972-10-01), Kane
patent: 3775693 (1973-11-01), Proebsting
patent: 3778783 (1973-12-01), Proebsting et al.
patent: 3870901 (1975-03-01), Smith et al.
patent: 3893087 (1975-07-01), Baker
patent: 3902082 (1975-08-01), Proebsting et al.
Atwood, "Field Effect Transistor Circuits," IBM Tech. Discl. Bull., vol. 6, No. 9, Feb. 1964, pp. 91-93.
Lohman, "Applications of MOSFETs in Microelectronics", SCP and Solid-State Technology, pp. 23-29, Mar. 1966.
Baitinger, "Self-Restoring Six-Device FET Memory Cell", IBM Tech. Discl. Bull., vol. 14, No. 4, pp. 1340-1341, Sept. 1971.

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