Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1998-01-06
1999-11-30
Quach, T. N.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257284, 257486, 257586, H01L 2973, H01L 29812
Patent
active
059947250
ABSTRACT:
A semiconductor device having a Schottky gate and a bipolar device. A semiconductor substrate has a surface layer in ohmic contact with the conductor and the deeper layer in Schottky contact with the conductor. The substrate has a recess which reaches into the deeper layer. A conductor field extends from the bottom of the recess in a direction perpendicular to the bottom. Insulating films are formed on both vertical surfaces of the conductor film. Another conductor film is formed across the top of the first conductor film and both insulating films. Conductor films are formed on the surface of the substrate on either side of the insulating films. In this device, the electrode length/width is reduced and the response to the element is improved. Further, because the second conductor film is formed on the first conductor film, it is possible to reduce the gate electrode and the base electrode.
REFERENCES:
patent: 4645563 (1987-02-01), Terada
patent: 4937204 (1990-06-01), Ishibashi et al.
patent: 5098853 (1992-03-01), Clark et al.
patent: 5112766 (1992-05-01), Fujii et al.
patent: 5124270 (1992-06-01), Morizuka
patent: 5187112 (1993-02-01), Kohno et al.
patent: 5194403 (1993-03-01), Delage et al.
patent: 5212103 (1993-05-01), Shimura
patent: 5288654 (1994-02-01), Kasai et al.
patent: 5296733 (1994-03-01), Kusano et al.
patent: 5336909 (1994-08-01), Katoh et al.
patent: 5389562 (1995-02-01), Mohammad
patent: 5432126 (1995-07-01), Oikawa
patent: 5538910 (1996-07-01), Oku
Metal-Semiconductor Field-effect Transistor, Nobou Shiga, et al, MWE '92 Microwave Workshop Digest, pp. 413-435.
A 0.25 .mu.m Inner Sidewall-Assisted Super Self-aligned Gate Heterojunction Fet Fabricated by All Dry-Etching Technology for Low Voltage Controlled LSIs, Masatoshi Tokushima, et al, Technical Report of Science, ED92-114, MW92-117, ICD92-135, 1993, pp. 9-16.
Ohnishi Toyokazu
Seki Akinori
Quach T. N.
Toyota Jidosha & Kabushiki Kaisha
LandOfFree
MOSFET having Schottky gate and bipolar device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOSFET having Schottky gate and bipolar device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOSFET having Schottky gate and bipolar device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1675842