MOSFET having drain voltage detection function

Details MOSFET having drain voltage detection function MOSFET having drain voltage detection function

1989-05-24

1991-02-19

Hille, Rolf

357 36, 357 35, 357 38, 357 238, 357 22, 357 2314, H01L 2972, H01L 2974, H01L 2910, H01L 2980

Patent

active

049949047

ABSTRACT:
A MOSFET includes a base layer of a first conductivity type selectively formed in the surface layer of a high-resistance semiconductor layer, and a source layer of a second conductivity type selectively formed in the surface layer of the base layer. A drain layer of the second conductivity type is formed in the front or rear surface layer of the high-resistance semiconductor layer so as to be separated from the base layer by a predetermined distance. A gate insulating film is formed on the base layer, and a gate electrode is formed on the gate insulating film. A voltage detection terminal layer of the second conductivity type independent from the source layer is formed in the base layer. A voltage detection electrode is in contact with the voltage detection terminal layer.

REFERENCES:
patent: 4344081 (1982-08-01), Pao et al.
patent: 4553084 (1985-11-01), Wrathall
patent: 4680604 (1987-07-01), Nakagawa et al.
patent: 4823173 (1989-04-01), Beasom
1982 IEDM Technical Digest, pp. 264-267; B. J. Baliga et al.
1983 IEDM Technical Digest, pp. 416-419; H. Wakaumi et al.

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